Abstract
The NixZn1-xO thin film with different contents were fabricated by metal-organic chemical vapour deposition system. The electrical properties of the films, such as the resistances and the carrier concentrations were measured and analyzed detailed. The results showed the Ni and oxygen content could eliminate the intrinsic donor defects and increase the acceptor defects in the film effectively. The p-type NixZn1-xO film with high hole concentration can be obtained easily by controlling both the Ni and O content in the film.
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