Abstract
CuInS2 (CIS) absorber thin films were prepared by sulfurization of In/Cu metallic stacked precursor. The precursor thin films were sulfurized using a commercial furnace system in the S2 (s)+Ar atmosphere at 425°C for 1h. Effects of different S vapor temperature from 150 to 400°C on the structural, morphological, compositional and optical properties of CIS thin films were investigated. X-ray diffraction and Raman studies showed that the sulfurized thin films with S vaporization temperature below 300°C exhibited CIS tetragonal structure with secondary phases such as CuxSy, CuIn5S8, and InxSy. The sulfurized thin films with S vaporization temperature over 350°C showed a single CIS tetragonal structure. Compositional ratio of CIS thin films showed that Cu/In and S/(Cu+In) ratio in the CIS thin films with S vaporization temperature over 350°C were 1.0–1.2 and 0.9–1.1, respectively, while compositional ratio deviated from stoichiometry when the sulfurized thin films below S vaporization temperature of 350°C. Optical study showed that the band gap energy and the absorption coefficient of CIS thin films were estimated from 1.18eV to 1.5eV and over 104cm−1, respectively.
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