Abstract
In this work, the characterization of porous silicon (PS) for potential visible light emission was investigated by simulation. SILVACO TCAD simulator was used to simulate PS by using process simulator, ATHENA and device simulator, ATLAS. Different pore diameter sizes of the PS structures were constructed. The structural, optical and electrical characteristics of the structures PS were investigated by current-voltage (I-V), current gain, spectral response and the energy band gap. It was observed that PS enhances the current gain compare to bulk Si and exhibited photo emission in the visible spectrum which constitutes to the quantum confinement effect of the Si in the PS structures.
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