Study on the Effect of Phosphorus Doping on Nano-SiC Structure

Abstract

The short-wavelength emission of nano-silicon carbide has long been confirmed. It is an ideal material for making short-wavelength light-emitting and optoelectronic devices. However, due to the relatively large band gap of silicon carbide, it is generally greater than 2eV. In the ideal case of chemical ratio, the energy band formed by the outer electrons of the atom is full, the conduction band is empty, and the Fermi energy level is in the forbidden band. In this paper, n-type nano-SiC films are prepared by P in-situ doping technology, and the structure of n-type silicon carbide with different doping ratios is analyzed.