Abstract

Abstract In the present study the dependence of both the bulk etch rate for Solid state nuclear track detectors (SSNTD) on etching time and the removal thickness percentage on etchant concentration of the NaOH solution and etching time have been studied for CR-39 detector irradiated with 0, 10, 50 and 100 (kGy) γ-ray. The dependence of track density on the etchant concentration of NaOH solution for CR-39 samples irradiated with doses of 0, 10, 50 and 100 (kGy) γ-ray at constant etching time has also been studied. The damage on the samples surface due to irradiation with different γ-dose was determined and noticed with electronic microscope.

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