Study on the effect of In diffusion annealing on the electrical properties of CdZnTe by a transformation model

Abstract

Cd0.9Zn0.1Te slices grown by the vertical Bridgman method were annealed in the vapour of In. A transformation model correlating the resistivity and conduction type of CdZnTe with the main diffusion parameter—the diffusion coefficient—is put forward in this paper. Combining the model with the analysis of our experimental data, DIn = 5.17 × 10−9, 2.625 × 10−10 and 3.455 × 10−11 cm2 s−1, the values of the In diffusion coefficient in Cd0.9Zn0.1Te at 1073, 973 and 873 K have been given, and the data coincide closely with those in CdTe provided by different authors. With the data, the effects of the annealing time on the change in the resistivity and conduction type of the Cd0.9Zn0.1Te slice, which is annealed in saturated In vapour at 1073, 973 and 873 K, have been simulated and good consistency acquired. This work describes an alternative way for obtaining the diffusion coefficient in semiconductor material and also enables one to analyse the diffusion process quantitatively and predict the resistivity variation and conduction type conversion of the semiconductor after annealing.