Abstract
Zinc oxide (ZnO) is an excellent piezoelectric material with simple composition. ZnO film is applied to the piezoelectric devices because it has high resistivity and highly oriented direction at c-axis. Structural and electrical properties in ZnO films are influenced by deposition conditions. Lithium-doped ZnO (LZO) films were deposited by RF magnetron sputtering method using Li-doped ZnO ceramic target with various ratios (0 to 10 wt.% LiCl dopant). LZO films revealed high resistivity of above 10 7 Ω cm with smooth surface when they were deposited with 4% LiCl-doped ZnO target under room temperature. However, their c-axis orientation was worse than the c-axis orientation of pure ZnO films. We have also studied on structural, optical and electrical properties of the ZnO films by XRD, AFM, SEM, XPS, and 4-point probe analyses. We concluded that LZO films were deposited with 4 wt.% LiCl-doped ZnO target and were apposite for piezoelectrical application.
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