Abstract
A newly designed microwave electron cyclotron resonance (ECR) plasma etching reactor has been developed for 450 mm wafer processing. The etching rates of polycrystalline silicon (poly-Si) and SiO2 across the wafer were evaluated as a function of ECR position. Two-dimensional (radial and vertical) distributions of the ion flux in the reactor were also investigated using a movable single probe system. A ring-shaped region of high-density plasma along the ECR plane was observed. This reveals the mechanism that the etching-rate distribution could be controlled by the ECR position. As a result, a polycrystalline silicon etching rate uniformity of 1.5% across a wafer was successfully obtained. Furthermore, the uniformity control of critical dimensions (CDs) based on wafer temperature was also investigated, and CD uniformity below 3 nm across the wafer was obtained in the optimum temperature distribution.
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