Study on the design and fabrication of Silicon-Based integrated current sensor based on 3D Through-Silicon-Via (TSV) Rogowski coil

Abstract

With the rapid advancement of microelectronics, 3D silicon-based integration microsystem technology has found widespread applications in various interconnected domains such as power generation, electric vehicles, smart grids, automation, and the Internet of Things (IoT). The high integration density within three-dimensional integrated microsystems has resulted in increasingly complex coupling between components, underscoring the critical importance of system health diagnostics. Presently, current waveform analysis, which yields valuable insights into the circuit system's condition, serves as a prevalent technique for system health assessment. However, traditional current sensors, typically packaged as discrete devices for current sensing, are inadequate for internal electrical signal detection within 3D IC microsystems. Therefore, this paper presents the design of a silicon-based integrated 3D Through-Silicon-Via (TSV) Rogowski coil tailored for in-situ electric current measurement. The structure and parasitic parameters of the 3D TSV Rogowski coil are meticulously determined through finite element method (FEM) simulations, facilitating the development of an appropriate signal processing circuit. Moreover, an Ordinary Differential Equation (ODE) current reconstruction method is proposed for measuring current. Leveraging this structural and circuit design, on-chip silicon-based integrated 3D TSV Rogowski coils are fabricated, followed by rigorous experimental validation. The experimental results convincingly attest to the effective in-situ current measurement capability of the on-chip silicon-based integrated 3D TSV Rogowski coil for 3D IC microsystems.