Study on the Cause and Control of Defects on Process of CVD SiC

Abstract

CVD SiC material with many excellent physical and chemical properties was used widely in the field of aerospace as reflector materials. In addition, CVD SiC thin film materials because of its compact structure, high purity can also be used as precision optical components of semiconductor industry. But the CVD process is a complex chemical process and the reaction process is very time consuming. Research of chemical vapor deposition for preparing silicon carbide process mechanism is important significance for the expansion of the application of silicon carbide. In this paper, CVD SiC coatings were fabricated by the pyrolysis of methyltrichlorosilane (MTS) in hydrogen at a low pressure. XRD and EDS were used to characterize the component of intermediate. SEM was used to observe the surface morphology and microstructure of coatings. The results indicated that key problem to be solved is to control the growth rate of SiC for high quality deposition coating, while the growth rate is also affected by process parameters. To obtain the materials to meet the use requirements, the need for control of each parameter in the reaction process.