Abstract
In this study, the pH-sensitive properties of the amorphous tungsten trioxide (a-WO 3) thin films by the RF sputtering system from a WO 3 target have been investigated. The electrolyte–insulator–semiconductor (EIS) structure with a-WO 3 thin film can be used to detect the sensitivity of ion and can be explained by the C– V curve in the different acidic buffer solutions (pH=1–7) using the C– V measurement. In addition, the tungsten trioxide thin films were also deposited on the double layer structure of a-WO 3/SiO 2 gate ion-sensitive field effect transistor (ISFET), and could obtain the shift of the linear region threshold voltage (Δ V T) of the ISFET devices in the acidic solutions. The a-WO 3 materials exhibit a fairly high response, and the sensitivity is obtained at about 50 mV/pH.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
