Study on structural, optical, and electrical properties of yttrium doped molybdenum oxide thin film and its MIS diode performance

Abstract

In this study, Orthorhombic pure MoO3 and various weight percentages of Y-doped MoO3 nanostructure arrays were successfully deposited using the simple jet nebulizer spray pyrolysis process at an ideal substrate temperature of 500 °C. In order to create metal-insulator-semiconductor-based Schottky barrier diodes, Y-doped MoO3 nanostructure arrays were employed as an insulating layer. The influence of Y-doped MoO3 concentration during the deposition process was carefully analyzed in relation to the structural, morphological, optical, and electrical characteristics of Y-doped MoO3 nanostructure array films. The produced films' crystalline nature with an orthorhombic phase was shown by the XRD pattern. An FE-SEM was used to analyse the solidly linked plate-like structure of Y-doped MoO3 at higher concentrations of 6 wt%. The EDAX spectrum was used to confirm the stoichiometric relationship between the elements O, Mo, and Y. The band gap values of the Y-doped MoO3 were determined using UV–Vis spectroscopy to range from 3.3 to 3.18 eV with doped concentrations. The film made with 6 wt% Y doped MoO3 showed a sharp improvement in electrical conductivity according to a DC electrical analysis. Notably, MIS diode made with 6 wt% Y-doped MoO3 in particular showed a low ideality factor (n = 2.63), strong photosensitivity (PS = 17,509.62%), responsivity of 738 mA/W, and a maximum QE of 97.49% under illumination (130 mW/cm2). Additionally, a 6 wt percent Y-based diode obtained a greater detectivity of D* = 7.16 1009 jones in a dark environment condition.