Abstract
The effects of SiN stress film, argon implantation and annealing on the stress of planar and patterned samples were examined. Stress levels changed with SiN films of line-and-space patterned samples can be well characterized by de-convoluting the UV-micro-Raman spectra. Argon implantation caused stress because argon atoms remained in silicon after long-time annealing. Larger stress change in the patterned sample than the planar sample by argon implantation was observed.
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