Abstract
Porous silicon were prepared by electrochemical corrosion. Undoped and boron doped silicon films were deposited on quartz substrate、porous silicon and silicon substrate by PECVD,and were solid phase crystallized at different temperature and different hours. The microstructure of films before and after annealing were studied by Raman and XRD. The results show that:the crystallization of films deposited on porous silicon and monocrystalline silicon substrate are better than quartz substrate; The substrate which has silicon crystal lattice play an important role of seed crystal in the solid phase crystallization, the same grain orientation film can be grown on certain condition.
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