Study on Single Event Upsets in a 28 nm Technology Static Random Access Memory Device Based on Micro-Beam Irradiation

Abstract

As an important spaceborne electronic device, the static random access memory (SRAM) device is inevitably affected by the radiation of high-energy particles in space during its space mission. To reveal the single event effect (SEE) mechanism of 28 nm technology SRAM caused by high-energy particles, the sensitive area positioning of single event upsets (SEUs) and the distribution characteristics of multi-cell upsets (MCUs) were studied based on the pinhole heavy ion micro-beam facility. The results show that the actual range of SEUs caused by micro-beam irradiation is 4.8 μm × 7.8 μm. By moving the device platform in small steps (1 μm each step), a one-dimensional positioning method for locating the sensitive area of SEUs was established, which can reduce the dependence of localization accuracy on beam spot size, and the positioning accuracy can be improved to 1 μm. The MCU test indicates that the upset pattern is closely related to the spacing of sensitive areas within adjacent SRAM cells, and the probability of MCUs is reduced by well contacts and bit interleaving.