Study on Single Event Transient Pulse Characteristics of 16nm SOI FinFET Devices

Abstract

In this paper, the single event transient (SET) characteristics of the advanced 16 nm SOI FinFET device are investigated. The impacts of five different variables on the SET response of the 16 nm SOI FinFET device are investigated, including the incident position, particle LET value, particle characteristic radius, incident angle, and drain bias. It is found that 1) unlike traditional planar devices, the SET shape of the 16 nm SOI FinFET device changes significantly. The “SET tail” caused by charge diffusion disappears, the SET time width is at the magnitude of tens of ps, and the total collected charge is at the magnitude of fC. 2) The most sensitive region of SET is the center of the gate. Under the condition that the incident position is the center of the gate, the amount of collected charge is 1.33 times that of the center of the drain. 3) Under the premise of the same LET value, the larger the radius of the particle, the smaller the SET amplitude generated, due to the entire electron-hole pairs participating in the SET response with a smaller radius. 4) The larger the incident angle of the particle, the smaller the SET amplitude generated by the FinFET device. When the incident angle is 45°, the amount of charge collected at the drain is only 0.23 times that of the normal incidence. 5) Changing the drain bias of the device results in a nearly constant SET curve, which is one of the features that distinguishes the FDSOI device from other devices.