Abstract
Silicon melt convection during the floating zone (FZ) crystal growth process under radio-frequency (RF) heating and the effect of the externally applied magnetic field on the RF-FZ silicon melt convection have been investigated numerically. The main purpose of the study is to clarify the characteristics of the silicon melt convection under the RF heating and the effect of externally applied magnetic field on such melt convection. The numerically obtained flow characteristics are almost the same as previously reported experimental results. Further, the fluctuation of melt convection disappears when an external vertical magnetic field is applied. The required minimum magnetic flux density to suppress the convection fluctuation is around 0.2 T.
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