Abstract

In this paper, we propose a novel gallium nitride-based multi-two-dimensional-electron-gas (2DEG)-channel self-parallel Gunn diode (SPD) for the first time. In the SPD, a trench anode is etched through at least the bottommost 2DEG channels, which splits all 2DEG channels into two shorter channels with lengths of L1 and L2. Therefore, one SPD is just equal to several shorter diodes in parallel; as a result, we call it a self-parallel Gunn diode. In the symmetrical SPD, the component of fundamental frequency is nearly multiplied as compared with the regular Gunn diode. In the asymmetrical SPD (L2 = nL1, n is a positive integer), the harmonic components are greatly enhanced, specially the nth harmonic. Our work demonstrates that the GaN-based terahertz SPD not only offers an easy transfer between two different frequencies, but also realizes the simultaneous enhancement of oscillation power and frequency.

Highlights

  • In recent years, more and more attention has been focused on the research and development of solid-state devices operating in the sub-terahertz (THz) and terahertz regimes [1,2,3]

  • We propose the self-parallel Gunn diode (SPD) with well-designed trench-anode etching through the bottom of the 2D electron-gas electron-gas (2DEG) channel

  • In order to split all the 2DEG channels into two parts, the trench should be etched through the bottommost

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Summary

Introduction

More and more attention has been focused on the research and development of solid-state devices operating in the sub-terahertz (THz) and terahertz regimes [1,2,3]. The GaN hetero-structural planar Gunn diodes are one of the most promising devices in high power, high frequency, and high temperature applications [14,15,16]. Achieving higher output power and terahertz oscillation frequency are two crucial issues for the. GaN planar Gunn diode to attain the final fulfillment of its commercialized application. As reported in [17,18,19], planar Gunn diodes generate smaller RF (Radio Frequency) power than the. The fundamental oscillation for the GaN Gunn diodes reported so far is still far from the terahertz regime.

Device Structure and Simulation Condition
Results and Discussion
Results
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