Abstract
Adsorption behavior of atomic deuterium on a hexagonal boron nitride (h-BN) thin film is studied by photon-stimulated ion desorption (PSID) of D+ and near edge X-ray absorption fine structure (NEXAFS) at the B and N K-edges. After the adsorption of atomic deuterium, D+ desorption yield η(hν) shows clear enhancement at the B K-edge and almost no enhancement at the N K-edge. NEXAFS spectra show a large change in the B K-edge and a small change in the N K-edge after the adsorption. We propose selective adsorption of atomic deuterium on the h-BN thin film based on the experimental results, and mention the effectiveness of applying the PSID method with X-ray to study hydrogen storage materials.
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