Study on schottky barrier of Cu/Graphene/4H-SiC interface based on first principles

Abstract

High stability 4H-SiC ohmic contact is currently a key technical challenge that silicon carbide devices urgently need to overcome. In the paper, the interfacial structures, atomic interactions and Schottky barrier height (SBH) of Cu/Graphene/4H-SiC were studied using the first-principles method. According to research, the SBH for Cu/G/4H-SiC is lower than the SBH for Cu/4H-SiC. The reasons for this phenomenon mainly include the following: 1. The graphene C atoms saturate the dangling bonds on the 4H-SiC surface and the influence of the metal-induced-gap-states (MIGS) at the interface is decreased. 2. A new phase is formed by inserting graphene between the Cu and 4H-SiC have low work functions. 3. An interfacial-electric-dipole layer (IEDL) formed at the interface of 4H-SiC and graphene may also reduce the SBH. These results make them to be promising candidates for future radiation resistant electronics.