Abstract
Abstract The ferroelectric capacitors are fabricated using RuO2/Pt electrode to examine the electrode effect on ferroelectric properties. PZT films are prepared by metalorganic decomposition (MOD) on sputter deposited electrodes. In particular, inductively coupled plasma(ICP) etcher is used to minimize the etching damage. In addition, TiO2 reaction barrier layer is also employed to retard the degradation of ferroelectric properties due to the reaction between a passivation layer and PZT film. The better hysteretic properties were obtained from Pt/RuO2/PZT/RuO2/Pt ferroelectric capacitors. The enhancement of ferroelectric properties is likely attributed to the modification in the microstructure of PZT film. The interfacial modification would be affected by the factors such as surface roughness, stress, and porosity of RuO2 film. The result implies RuO2/Pt would be a good electrode for a nonvolatile memory application.
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