Abstract
The damage produced by implantation of Er ions of 400 keV at a fluence of 5 × 10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after annealing in oxygen and nitrogen atmospheres successively at 1000 °C, and only a small portion of the Er atoms segregated to the silicon surface. Most of the Er atoms diffused to deeper depths because of the affinity of Er for oxygen.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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