Abstract
In the present study, AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated through metal–organic chemical vapor deposition. Gate recess etching, combined with inductively coupled plasma reactive ion etching, was adopted, and etching time was controlled to manipulate the threshold voltage [Formula: see text]. The DC characteristics of devices etched for 0–25 s were investigated. [Formula: see text] exhibited a 1.9-V positive shift in the device with the AlGaN layer etched for 25 s. The effect of an AlN buffer layer on the [Formula: see text] shift was also investigated. The [Formula: see text] of the HEMT etched for 25 s and without an AlN buffer layer exhibited a positive shift of 3.1 V.
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