Abstract
A theoretical study is presented to solve the semiconductor optical amplifier (SOA) polarization dependent problem. We take InAs quantum dot (QD) coupled with tensile-strained InyGa1-yAsP quantum well (QW) structure as SOA active region. A theoretical model which describes the carrier transport process in QD, QW and barrier is established and the carrier rate equations and optical propagation equations are achieved based on the above model. The performance of QD coupled QW SOA is simulated. Optical gain spectrums of transverse electronic (TE) mode and transverse magnetic (TM) mode are presented and the polarization power ratio between TE mode and TM mode as the function of injection current and input optical signal wavelength is also achieved. By optimal designing of the structural parameters of SOA and operation conditions, we can get polarization independent QD coupled QW SOA in certain ranges of input optical wavelength.
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