Study on PID performance degradation based on passivation materials such as alumina/silicon nitride SiN crystalline silicon solar cells

Abstract

Solar energy is a pure and reproducible energy. China has paid more and more consideration to the investigation and employment of solar energy. The investigation focuses on the phenomenon of PID capability degradation of inactivation mediums for instance alumina/silicon nitride in transparent silicon high-efficiency solar cells. Through the laboratorial investigation on the effect of individual in-activation membrane processes on the PID damping behavior, it is found that the deposition approach of silicon oxide and silicon nitride inactivation membranes on the surface of transparent silicon cells directly affects the PID damping. Excellent anti-PID capability; single-layer silicon oxide membrane with the same thickness has better anti-PID capability than silicon nitride membrane. Double-layer silicon oxide/silicon nitride superimposed membrane with the enhancement of refractive index, the anti-PID damping capability gradually enhancements, and better anti-PID capability than monolayer silicon nitride. Investigation on the PID capability damping of inactivation mediums is of great significance to further the capability of solar cells and help to further the effective employment of solar energy.