Abstract
With the rise of group III nitride semiconductor materials, InGaN provides a great possibility for manufacturing high performance photocathodes with wide spectral response. In order to reduce the secondary absorption of photoelectrons by adjacent nanocones and improve the collection efficiency, we established a field-assisted negative electron affinity potential InGaN nanocone array photocathode. Finite difference time domain (FDTD) method is used to study the filling ratio, cone ratio, angle and photoemission performance of nanocone array assisted by external electric field. We found that the external electric field can greatly improve the collection efficiency and electron collection ratio of the nanocone array. The collection efficiency is increased to 41.2% and the electron collection ratio is increased to 65.4%, which is a significant improvement compared with that without external electric field. Therefore, the study in this paper can provide a certain theoretical reference for the preparation and performance improvement of InGaN nanocone array photocathode.
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