Abstract

(1–x)NdGaO3-xBi0.5Na0.5TiO3 [(1–x)NdGaO3-xBNT, 0.05 ≤ x ≤ 0.7)] ceramic systems were fabricated using a conventional solid-state reaction, and their phase structures, microstructures, and microwave dielectric characteristics were systematically investigated. The XRD patterns results showed an orthorhombic perovskite structure as the main phase with a Pbnm space group at x = 0.05. In a range of x = 0.1–0.3, the main Nd3Ga5O12 cubic structure phases (Ia-3d space group) had been formed due to the increase in the cation vacancies resulting from the Na and Bi ion volatilization at the higher densification sintering temperatures (1400–1450 °C). As (Na0.5Bi0.5)2+ ions increased and the sintering temperatures decreased, the orthorhombic perovskite-type Pnma space group solid solutions (the main phases) were detected at x = 0.4 and 0.5, accompanied with a certain amount of second phase Bi2O3 in the samples at x = 0.6 and 0.7. The results of Raman spectroscopy analysis, EDS data analysis, and surface morphologies observations were basically in keeping well with the XRD analysis results, wherein the Raman-active modes also implied that the crystal structure of the main phase actually had a tendency to change the perovskite structure when x = 0.3. The εr value increased gradually as the x value increased from 0.05 to 0.5 because of the increase in the ionic polarizability, and increased slowly at x = 0.6, then decreased slightly as the x value further increased to 0.7 due to the formation of the second phase. The Q × f values of the (1-x)NdGaO3-xBNT (x = 0.05–0.7) ceramic systems were strongly influenced by the densification, lattice defects, and phase composition and content. The τf values could be well predicted by replacing Na, Bi and Ti ions with suitable substitutions for these ceramic systems. As a result, the new temperature-stable ceramics with optimal dielectric properties of εr ~43.1, Q × f ~6700 GHz (at 5.85 GHz), and τf ~ −24.5 ppm/°C and εr ~ 44.5, Q × f ~ 5600 GHz (6.12 GHz), and τf ~ +2.4 ppm/°C were obtained in the (1-x)NdGaO3-xBNT composite series at x = 0.5 and x = 0.6 sintered at 1320 °C and 1250 °C for 4 h, respectively.

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