Abstract
Chemical mechanical polishing (CMP) technology in the semiconductor manufacturing process is expanded and used to machine lithium niobate (LiNbO 3 ) wafer efficiently in order to obtain ultra smooth LiNb0 3 . The alkaline polishing slurry for LiNbO 3 CMP is prepared in order to decreasing surface roughness and improving material removal rate. The paper optimized design four key parameters, polishing pressure, polishing plate speed, slurry flow rate and slurry pH which influence removal rate of LiNb0 3 were analyzed by using Taguchi method and the comprehensive optimized polishing parameter were obtained. The results of experiments indicate that when the polishing pressure is 140kPa, the polishing plate speed is 60r/min, the slurry flow rate is 180ml/min and the slurry pH is 11, the optimal polishing efficiency can be obtained. The removal rate of LiNb0 3 wafer reaches 350nm/min.
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