Abstract

The structure and morphology of Si 3N 4/TiN multilayer synthesized by ion beam assisted deposition (IBAD) were studied by X-ray diffraction (XRD), Auger electron spectrum (AES) and Field-emmision scanning electron microscopy (FESEM). It was found that a well-defined multilayer structure was formed. The multilayer was composed of polycrystalline TiN and amorphous Si 3N 4. The compositions were determined as N:Ti=1 and N:Si=0.9, respectively. Ion beam etching technique was employed to prepare special specimen for FESEM morphology observation. Cross-sectional FESEM was also conducted. Results showed that the Si 3N 4 layers consisted of granular particles of about 100 nm in size and the particles in TiN layers were much smaller.

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