Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible

Abstract

Boron (B) doping sources and crucible materials for stable, reproducible and high concentration B doping in fluorescent SiC (f-SiC) were investigated. When a Ta crucible was used with BN powder as a B doping source were used, B doping did not occur owing to too low C/Si ratio. On the other hand, when a C crucible and suitable Ta components inside the crucible were used, a high B concentration of 1.58 × 1019 cm-3 was obtained, owing to the high C/Si ratio. The results indicate that a C crucible with optimal Ta components and BN powder are suitable for high concentration B doping.