Abstract
GaAs films have been deposited on substrates of quartz glass by radio frequency magnetron sputtering technique in the atmosphere with or without hydrogen. The GaAs and hydrogen doped GaAs thin films have been studied by X-ray diffraction, scanning electron microscopy. Moreover radial distribution function and pair correlation function analysis method have been established in order to analyze microstructure further. The as-deposited films are amorphous at room temperature. The distances between the first neighboring atoms of a-GaAs:H don't change compared with a-GaAs:H. But Hydrogen restrains reuniting of crystal grain while sputtering and short range regular domains of a-GaAs:H are smaller than that of a-GaAs. In addition, the morphology of GaAs films is coarser than that of GaAs:H thin film. The content of hydrogen and the various types of hydrogen bonding have been investigated using Fourier transform infrared absorption spectroscope.
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