Study on microstructure and properties of Al/SiCp electronic packaging materials embedded metal components

Abstract

With the development of microelectronics and semiconductor, the density of electronic packaging increases quickly, which result in the high demand to the material. Aluminum reinforced with silicon carbide particles composites is one of potential materials for electronic packaging with its excellent properties such as low density, high thermal conductivity, lower coefficient of thermal expansion etc. In order to obtain the final product, packaging component of Al/SiCp must to be bonded with different materials in practical application. It is significant practical to research the infiltration bonding of aluminum silicon carbide electronic packaging materials and metal component. Al/SiCp electronic packaging materials embedded metal components are fabricated by gas pressure infiltration. The microstructure of interface is observed by EDS and XRD, Bend strength is in order to test the joint strength. The result shows that during the fabrication process of Al/SiCp electronic packaging materials, the reliable joint between composites and solid metal (FeNi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">50</sub> , Ti) can be realized. In the research of the infiltration bonding of Al/SiCp/FeNi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">50</sub> , it is found that (Fe,Ni) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (Al,Si) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> layer and (Fe,Ni) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> (Al,Si) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sub> layer all exist in the interface reactive layer of the joint. With the increment of the infiltration bonding temperature, thickness of the former approximately stay the same, and the relationship between the latter and temperature is near linear. As a result of the formation of intermetallic compound, bending strength of joint is low. Interface bending strength is up to 46% of that of Al/SiCp (467MPa), when the infiltration bonding temperature is 670degC. On the study of the infiltration bonding of Al/SiCp/Ti, it is found that there wasn't any interface reactive layer in the joint. Mechanical and metallurgic combinations were all found in the interface at lower temperatures. When the infiltration bonding temperature is 710degC, atoms in the Al/Ti interface occurs interdiffusion and the interface, which has a 10mum thick diffusion layer, was bonded well. About the mechanical properties, it is found that, the bend strength of Al/SiCp/Ti is much more than that of Al/SiCp/FeNi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">50</sub> and with the increase of infiltration bonding temperature, the bend strength increased first and then decreased.