Study on Mechanism of Domain Inversion in LiNbO3 and LiTaO3 and Its Application of Memory-nm Size Domain Inversion by EB Irradiation-

Abstract

The ferroelectric large capacity memory that made direction of the spontaneous polarization of domain inversion correspond to binary values of a memory can be considered as one of the new devices adapting domain inversion technology. This paper describes the feature of LiNbO3 (LN) and LiTaO3 (LT) crystals investigated mainly for the purpose of memory application, the mechanism of domain inversion control, and its applicability in large capacity memory. LT crystal is considered to be a suitable material for nm-size polarization control memory, and this paper describes that the electron beam polarization controlling method is one of the methods effective for nm-size polarization control. Specifically, if thin LT crystal layer with a thickness of 1 μm can be formed, very small polarization structure with a diameter of less than 3 nm could be realizable. If polarization control of 1 dot is carried out into 10 nm × 10 nm region, a super-large capacity memory with a density of 1 T bit/cm2 may be realized.