Abstract
A new and simple method by which it is possible to separate the bulk generation-recombination current from the externally flowing edge leakage current of ion implanted p-n mesa diodes is introduced. Using this method, the value of the carrier lifetime as well as its profile along the depth is determined. Having demonstrated the effectiveness of this new method for furnace annealed samples, investigations were then carried out for laser annealed ones. It was observed from the results obtained from laser annealed (Q-switched, Ruby) diodes that the lifetime does not vary with depth at energies greater than 1.6 J/cm2. In this energy region, the lifetime becomes longer as the energy is increased reaching an optimum at 2.05 J/cm2, after which a further increase in energy causes a sudden shortening of the lifetime.
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