Abstract
The performance of Ag-8.5Au-3.5Pd alloy wire after cold deformation and annealing were analyzed by SEM (scanning electron microscope), strength tester and resistivity tester. The processing process and performance change characteristics of Ag-8.5Au-3.5Pd alloy wire were studied. The results show that alloy wire grains gradually form a fibrous structure along with the increase in deformation. The strength of the wire increases with the increase in deformation rate, but the increase trend becomes flat once the deformation rate is higher than 92.78%; the resistivity of Ag-8.5Au-3.5Pd alloy wire decreases with the increase in annealing temperature, reaching minimum (2.395 × 10−8 Ω·m) when the annealing temperature is 500 °C; the strength of Ag-8.5Au-3.5Pd alloy wire decreases with the increase in annealing temperature. When the annealing temperature is 500 °C, the strength and elongation of the φ0.2070 mm Ag-8.5Au-3.5Pd alloy wire are 287 MPa and 25.7%, respectively; the fracture force and elongation of φ0.020 mm Ag-8.5Au-3.5Pd alloy wire are 0.0876 N and 14.8%, respectively. When the annealing temperature is 550 °C, the metal grains begin to grow and the mechanical performance decrease; the φ0.020 mm Ag-8.5Au-3.5Pd alloy wire have good surface quality when the tension range is 2.5–3.0 g.
Highlights
With the development of semiconductor devices and integrated circuits toward multilead packaging, high integration and miniaturization, more attention has been paid to ultra-fine, low-cost, high-temperature-resistant wires [1,2,3]
When the annealing temperature was 500 ◦ C, the alloy wire fully recovered and began to recrystallize; the grain fiber structure of the alloy wire changed, and the strength decreased to 287 MPa and the elongation increased to 25.7%
As the annealing temperature increased to 550 ◦ C, the grains began to grow, while the strength and elongation decreased to 256 MPa and 20.6%, respectively
Summary
With the development of semiconductor devices and integrated circuits toward multilead packaging, high integration and miniaturization, more attention has been paid to ultra-fine, low-cost, high-temperature-resistant wires [1,2,3]. There are many kinds of bonding materials, among which the silver base alloy bonding wires exhibit excellent mechanical properties, good oxidation resistance and high reliability, and are cost effective. As a result, they can limit light attenuation and improve the conversion rate in light-emitting diode (LED) packaging. The research and development of silver-based alloy wire with Au and Pd solves many problems in the application of single-element wire such as gold wire, copper wire and silver wire, and have broad application prospects in chip packaging such as high-density, large-scale integrated circuits and high-power. Ag-8.5Au-3.5Pd alloy wire during processing is studied, and the processing technology of the Ag-8.5Au-3.5Pd alloy wire is further explored, which provides a theoretical basis for the manufacture of Ag-8.5Au-3.5Pd alloy wire
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
