Abstract
A 200 nm Ti film was deposited on a polished AlN ceramic substrate at 200 degrees C by electron beam evaporation and then annealed under high vacuum conditions. The MCs+-SIMS technique (detecting MCs+ secondary ions under Cs' primary ion bombardment, where: M is the element to be analysed), RES and x-ray diffraction (XRD) measurements were employed to probe the solid interfacial reaction between Ti and AlN from 200 degrees C to 850 degrees C, and the variation of interfacial composition distribution with annealing temperature and time ass given. Ternary aluminides were discovered and the formation and development of the aluminides were observed in the interfacial region. The results indicate that, the; MCs+-SIMS technique is an effective method to study the interfacial reaction between metal and ceramic. Copyright (C) 1999 John Wiley & Sons, Ltd.
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