Abstract
Si heteroepitaxial layers were grown on InP(100) substrates for the first time by molecular beam epitaxy. The initial growth process of Si/InP was investigated by the in-situ observations of the reflection high-energy electron diffraction (RHEED) intensity and the changes of the RHEED patterns. During the Si growth, the (2×4) pattern changed to a (3×1) structure at 0.3 monolayers (ML) and two-dimensional growth mode occurred up to 2 ML thick growth. With further growth, the RHEED intensity oscillations disappeared although the (3×1) streaky pattern was maintained up to ∽ 10 ML. A surface segregation of In atoms during the Si growth was observed by secondary ion mass spectroscopy. From these results, we proposed a model for the initial growth process of Si on InP.
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