Abstract

Mercury indium telluride (MIT) single crystal is a new type room-temperature near-infrared detecting material. In this research, MIT grown by vertical Bridgman method (VBM) was cut into wafers with 0.8 mm thick along the axial direction. The infrared (IR) transmission, dislocation density, element composition and electric properties of the wafers were measured by means of Fourier transform infrared spectrophotometer (FTIR), X-ray energy dispersive spectrometer (EDS) and Hall instrument respectively. Besides, the approximate mathematical relations corresponding to evolutions of component deviation, dislocation density and resistivity with IR transmission were fitted in the cases of wave number 500cm−1 and 4000cm−1 respectively. A non-destructive testing method for the quality of MIT wafers by the IR transmission was established. The results show that the maximum IR transmittance was 57.55% in the middle of the grown MIT ingot. The wafers with higher transmission have more homogenized concentration distribution, lower dislocation density and higher resistivity.

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