Study on In 2O 3–SnO 2 transparent and conductive films prepared by d.c. sputtering using high density ceramic targets

Abstract

The influence of SnO 2 concentration in the target on the film characteristics was studied in order to make the useful database for the device design when low discharge voltage sputtering method and a high density In 2O 3–SnO 2 ceramic targets were used. In the case of the films deposited on unheated substrate, X-ray diffraction profile showed amorphous structure. Minimum resistivity of 358 μΩ cm was obtained by In 2O 3 film with mobility of 40.1 cm 2 (V s) −1 and carrier density of 4.35E+20 cm −3. With the increase of SnO 2 contents, resistivity of the films increased because of the decrease in both carrier density and mobility. Whereas, the films deposited on heated substrates showed polycrystalline structure. Resistivity was reduced, ranging from 5 to 20 wt.% SnO 2, and minimum resistivity of 136 μΩ cm was obtained at 15 wt.% with mobility of 40.5 cm 2 (V s) −1 and carrier density of 1.13E+21 cm −3. Transmittance and reflectance of these films strongly depend on carrier density.