Abstract
The As/P exchange behavior on a GaAs and an InxGa1−xAs surface exposed to a P2 flux and on an InyGa1−yP surface exposed to an As2 flux has been studied by reflection high-energy electron diffraction (RHEED) in a gas-source molecular beam epitaxy system. We found the exposure of InxGa1−xAs to a P2 flux results in a severe substitution of As atoms by P atoms at the normal growth temperature (520 °C), forming a strained transition layer and causing a rough surface within 10 s, which is indicated by a spotty RHEED pattern. The InyGa1−yP surfaces, however, remained relatively stable under an As2 flux. Two methods (a thin protective layer and low-temperature growth) for eliminating the As/P exchange have been developed, and both result in abrupt interfaces.
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