Abstract
A feasibility study is presented on the performance parameters of a novel on-chip antenna based on metasurface technology at terahertz band. The proposed metasurface on-chip antenna is constructed on an electrically thin high-permittivity gallium arsenide (GaAs) substrate layer. Metasurface is implemented by engraving slot-lines on an array of 11 × 11 circular patches fabricated on the top layer of the GaAs substrate and metallic via-holes implemented in the central patch of each row constituting the array, which connects the patch to the leaky-wave open-ended feeding slot-lines running underneath the patches. The slot-lines are connected to each other with a slit. A waveguide port is used to excite the array via slot-lines that couple the electromagnetic energy to the patches. The metasurface on-chip antenna is shown to exhibit an average measured gain in excess of 10 dBi and radiation efficiency above 60% over a wide frequency range from 0.41 to 0.47 THz, which is significant development over other on-chip antenna techniques reported to date. Dimensions of the antenna are 8.6 × 8.6 × 0.0503 mm3. The results show that the proposed GaAs-based metasurface on-chip antenna is viable for applications in terahertz integrated circuits.
Highlights
The terahertz (THz) frequency band that spans the frequencies between 0.1 and 10 THz offers potential applications in various disciplines including medical s cience1, imaging[2], defence and s ecurity[3], time-domain spectroscopy4, astronomy5, agriculture[6], and wireless communication s ystems[7]
This paper presents a feasibility study of a THz on-chip antenna based on metasurface concept to improve its bandwidth, radiation gain and efficiency characteristics
The study undertaken demonstrates the feasibility of an on-chip antenna constructed of an array of 11 × 11 circular patches at terahertz band
Summary
The study undertaken demonstrates the feasibility of an on-chip antenna constructed of an array of 11 × 11 circular patches at terahertz band. The antenna design is based on a metasurface which is fabricated on a thin but high-permittivity GaAs layer. The metasurface and the leaky-wave open-ended slot-lines feed structure are fabricated respectively on the top and bottom sides of the GaAs substrate layer. The proposed metasurface onchip antenna is compact with dimensions of 8.6 × 8.6 × 0.0503 m m3 and it has an average gain that is in excess of 10 dBi and radiates with an average radiation efficiency in excess of 60% over frequency range of 0.41–0.47 THz
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