Abstract
The hot carrier effect of strained Si MOS is more significant than that of bulk Si MOS. Based on the study of the mechanism of hot carrier effect in uniaxial strained Si MOS, the factors affecting the hot carrier effect of uniaxial strain Si MOS and the effect on the electrical characteristics of the device are analyzed. The models of hot carrier collision ionization rate, interface state and threshold voltage degradation of uniaxial strain Si NMOS devices are established. The simulation results show that the threshold voltage shift is proportional to the interface state. When the interface state reached 1E8, the threshold voltage began to drift significantly. And reaching 1E12, the interface state reached saturation. With the increase of stress time, the shift of threshold voltage is decreasing.
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