Abstract
The silicon PIN radiation detectors are always used under high working voltages. The breakdown voltage improvement has been researched in this paper. The resistivity of the silicon is larger than 20,000 Ω cm and the thickness is 1 mm. The field plate and field-limiting ring as well as round corners are applied for comprehensive improvement. The impact of field limiting ring distance to the main junction is tested by varying the ring distance from 30 μm to 260 μm. The simulation research on ring distance is carried out. The round corner radius is researched by varying the radius from 30 μm to 500 μm.
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