Abstract
AbstractThe GaAs monolithic dynamic divider, a high speed divider for microwave phase locked oscillators, has been studied. It can be operated at a higher speed than static dividers. The load in the inverter section is a passive resistor. Improved circuit topology at interstage buffers and reduction of gate resistance by the Au/WSi self‐aligned process have been used for superior characteristics of a single FET. For a 1 μm gate length, both division and frequencies ranging from 4.3 GHz to 7.3 GHz have been observed. As a system application, the divider has been implemented in a 13 GHz frequency synthesizer of oscillator‐multiplier type. The divider has been operated in the 6.5 GHz band and an operation with 1 MHz steps has been confirmed at the 13 GHz band. The phase noise has been 90 dBc/Hz at the off‐carrier frequency of 10 kHz. This value is sufficient for conventional microwave circuits.
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