Abstract
GaAs/GaAlAs MQW structures with varying well widths having narrowest wells on the top layers and gradually wider wells for the inner layers were studied and confirmed by Auger spectroscopy and photoluminescence measurements. Multiplication of quantum wells gives stronger photoluminescence due to higher density of quantized states in the structure. This MQW structure was experimented in the photoconductivity and photocurrent measurements at room temperature. It is found that at low multiplication of quantum wells in MQW structure, the photoconductivity effect was mainly controlled by bulk material as shown in the spectral response. Photocurrent at low bias voltage shows relatively better spectral sensitivity at shorter wavelength. The photoconductivity and photocurrent measurements indicate that appropriate MQW structures acting as broader absorbers due to graded characters of quantized energy states are needed for photovoltaic application. Integration of MQW structure to solar cell structure was also investigated.
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