Abstract
Our understanding of the causal relationship between material parameters and GaAs FET threshold voltage is briefly presented from the viewpoint of point defect reactions. Primarily, dislocations in LEC-grown GaAs are focused on in light of threshold voltage scattering, and point defects associated with dislocations attributable to threshold voltage scattering are discussed. High temperature post-growth annealing results in the increase in [EL2], which provides homogenization of device characteristics, even when the crystal contains dislocations. A possible defect model around dislocations and evolution of such defects in crystal growth and annealing cycles are proposed, where As-interstitial is mainly considered.
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