Abstract
A mirror projection electron microscopy (MPJ), non destructive, high spatial resolution and high throughput method, is useful for defect inspection in silicon carbide (SiC) wafer. Previously, it was demonstrate that three type of typical dislocations in 4H-SiC, threading screw dislocation (TSD), threading edge dislocation (TED) and basal plane dislocations (BPD) can be identified in MPJ image. Origin of the contrast of dislocations in MPJ image was revealed by observation of the same wafer at as-grown and after CMP processing. Streak of TSD spot is due to surface morphology, and the contrast of BPD isn’t due to surface morphology but due to charging on dislocation line.
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