Study on Fixed-Abrasive Lapping SiC Crystal Substrate Based on Diamond Particle

Abstract

Silicon carbide substrate has been widely used in semiconductor lighting (LED), integrated circuit and microelectronic, optoelectronic devices. According to the former study, a series of the fixed abrasive lapping platen has been developed. The material removal rate (MRR), surface roughness and surface flatness of lapping SiC single crystal substrate (0001) C surface are studied using fixed abrasive lapping. Compared with the results of the free abrasive lapping, the surface flatness of SiC single crystal substrate (0001) C surface after lapping with the fixed abrasive lapping is better than that of the free abrasive lapping, the MRR of lapping with the fixed abrasive lapping platen is higher than that of the free abrasive lapping and the surface roughness (Ra) of lapping with the fixed abrasive lapping is lower than that of the free abrasive lapping. The study results show that there are some scratches on the sample surface after lapping with the fixed abrasive lapping. There are some hills and pits on the sample surface after lapping with the free abrasive, but without scratches. The height difference of the surface profile lapping with the free abrasive is much larger than that of fixed abrasive lapping. The research results can provide a reference for studying the fixed abrasive lapping platen, the lapping process and lapping mechanism.