Abstract
A new research project on extreme ultraviolet (EUV) source development has just been started at the Institute of Laser Engineering, Osaka University. The main task of this project is to find a scientific basis for generating efficient, high-quality, high power EUV plasma source for semiconductor industry. A set of experimental data is to be provided to develop a detailed atomic model included in computer code through experiments using GEKKO-XII high power laser and smaller but high-repetitive lasers. Optimum conditions for efficient EUV generation will be investigated by changing properties of lasers and targets. As the first step of the experiments, spherical solid tin and tin-oxide targets were illuminated uniformly with twelve beams from the GEKKO XII. It has been confirmed that maximum conversion efficiency into 13.5 nm EUV light is achieved at illumination intensity less than 2 x 10 11 W/cm 2 . No significant difference is found between laser wavelengths of one μm and a half μm. Density structure of the laser-irradiated surface of a planar tin target has beem measured experimentally at 10 12 W/cm 2 to show formation of double ablation structure with density plateau by thermal radiation transport. An opacity experiment has just been initiated.
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