Abstract

The proposed method is based on the first principles of density functional theory to calculate the electronic structure of SnO2 and rare-earth elements-doped SnO2. The energy band and density of state of undoped SnO2 and SnO2-X (La, Ce, and Y) are calculated and apply Origin Pro 9.0 for quantitative calculation. Conducting experimental verification of AgSnO2 and AgSnO2-X (La, Ce, and Y), contact materials prepared by sol–gel and powder metallurgy methods and the contact resistance and arcing energy are measured by the simulated electrical contact test. In the simulation results of SnO2-X (La, Ce, and Y), the relative electrical conductivity of Y-doped SnO2 is the largest. In the experimental results, the minimum and maximum values and the range of the variation of the arc energy and contact resistance after AgSnO2-X (La, Ce, and Y) are reduced. The effect of Y-doped AgSnO2 is more obvious and has the highest density. The final simulation and experimental results can be well matched. The best electrical performance is Y-doped AgSnO2, followed by La-doped AgSnO2.

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